Invention Grant
US08853735B2 Epitaxial substrate for semiconductor device and semiconductor device
有权
用于半导体器件和半导体器件的外延衬底
- Patent Title: Epitaxial substrate for semiconductor device and semiconductor device
- Patent Title (中): 用于半导体器件和半导体器件的外延衬底
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Application No.: US13623308Application Date: 2012-09-20
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Publication No.: US08853735B2Publication Date: 2014-10-07
- Inventor: Makoto Miyoshi , Mikiya Ichimura , Tomohiko Sugiyama , Mitsuhiro Tanaka
- Applicant: NGK Insulators, Ltd.
- Applicant Address: JP Nagoya
- Assignee: NGK Insulators, Ltd.
- Current Assignee: NGK Insulators, Ltd.
- Current Assignee Address: JP Nagoya
- Agency: Burr & Brown, PLLC
- Priority: JP2010-068203 20100324
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L29/66 ; H01L29/778 ; H01L21/02 ; H01L29/20 ; H01L29/04 ; H01L29/47 ; H01L29/201
Abstract:
Provided is an epitaxial substrate for a semiconductor device, which has excellent schottky contact characteristics that are stable over time. The epitaxial substrate for a semiconductor device includes a base substrate, a channel layer formed of a first group III nitride containing at least Ga and having a composition of Inx1Aly1Gaz1N (x1+y1+z1=1), and a barrier layer formed of a second group III nitride containing at least In and Al and having a composition of Inx2Aly2Gaz2N (x2+y2+z2=1), wherein the barrier layer has tensile strains in an in-plane direction, and pits are formed on a surface of the barrier layer at a surface density of 5×107/cm2 or more and 1×109/cm2 or less.
Public/Granted literature
- US20130015466A1 EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE Public/Granted day:2013-01-17
Information query
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