Semiconductor device

Invention Grant

US08853737B2 Semiconductor device 有权

Title translation: 半导体器件

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Patent Title: Semiconductor device
Patent Title (中): 半导体器件
Application No.: US13493745

Application Date: 2012-06-11
Publication No.: US08853737B2

Publication Date: 2014-10-07
Inventor: Shigeru Kusunoki
Applicant: Shigeru Kusunoki
Applicant Address: JP Tokyo
Assignee: Mitsubishi Electric Company
Current Assignee: Mitsubishi Electric Company
Current Assignee Address: JP Tokyo
Agency: Studebaker & Brackett PC
Priority: JP2008-291327 20081113
Main IPC: H01L29/739
IPC: H01L29/739 ; H01L27/088 ; H01L29/78 ; H01L29/40 ; H01L49/02 ; H01L29/06 ; H01L27/092 ; H01L21/8238 ; H03K17/08

Abstract:

A semiconductor device includes a semiconductor substrate including a semiconductor layer, a power device formed in the semiconductor substrate, a plurality of concentric guard rings formed in the semiconductor substrate and surrounding the power device, and voltage applying means for applying successively higher voltages respectively to the plurality of concentric guard rings, with the outermost concentric guard ring having the highest voltage applied thereto.

Abstract(Chinese):

半导体器件包括半导体衬底，其包括半导体层，形成在半导体衬底中的功率器件，形成在半导体衬底中并围绕功率器件的多个同心保护环;以及电压施加装置，用于分别向多个同心保护环，最外面的同心保护环具有施加到其上的最高电压。

Public/Granted literature

US20120248499A1 SEMICONDUCTOR DEVICE Public/Granted day:2012-10-04

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00	专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/66	.按半导体器件的类型区分的
H01L29/68	..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的（H01L29/96优先）
H01L29/70	...双极器件
H01L29/72	....晶体管型器件，如连续响应于所施加的控制信号的
H01L29/739	.....受场效应控制的