A pressure contact semiconductor device includes a cathode post electrode and a gate electrode formed on a top surface of a substrate, an anode post electrode formed on a bottom surface thereof, a circuit substrate, a cathode flange overlapping the cathode post electrode and connected to the circuit substrate, a cathode fin electrode overlapping the cathode flange, an anode fin electrode underlapping and the anode post electrode, a gate flange connected to both the gate electrode and the circuit substrate, a securing member having a parallel portion parallel to the circuit substrate and a perpendicular portion perpendicular to the circuit substrate, the perpendicular portion being secured to a side of the cathode fin electrode, and a spacer formed from plate material and secured at the top to the parallel portion of the securing member and at the bottom to the circuit substrate.