Invention Grant
- Patent Title: Pseudomorphic high electron mobility transistor comprising doped low temperature buffer layer
- Patent Title (中): 伪态高电子迁移率晶体管，包括掺杂的低温缓冲层
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Application No.: US13679257Application Date: 2012-11-16
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Publication No.: US08853743B2Publication Date: 2014-10-07
- Inventor: Jonathan Abrokwah , Nathan Perkins , John Stanback , Philbert Marsh , Hans G. Rohdin
- Applicant: Avago Technologies General IP (Singapore) Pte. Ltd.
- Applicant Address: SG Singapore
- Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.
- Current Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.
- Current Assignee Address: SG Singapore
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/20 ; H01L29/778
Abstract:
A pseudomorphic high electron mobility transistor (PHEMT) comprises a substrate comprising a Group III-V semiconductor material, a buffer layer disposed over the substrate, wherein the buffer layer comprises microprecipitates of a Group V semiconductor element and is doped with an N-type dopant, and a channel layer disposed over the buffer layer.
Public/Granted literature
- US20140138746A1 PSEUDOMORPHIC HIGH ELECTRON MOBILITY TRANSISTOR COMPRISING DOPED LOW TEMPERATURE BUFFER LAYER Public/Granted day:2014-05-22
Information query
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