Invention Grant
- Patent Title: Silicon based opto-electric circuits
- Patent Title (中): 硅基光电路
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Application No.: US12356252Application Date: 2009-01-20
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Publication No.: US08853745B2Publication Date: 2014-10-07
- Inventor: Kamal Tabatabaie , Jeffrey R. LaRoche , Valery S. Kaper , John P. Bettencourt , Kelly P. Ip
- Applicant: Kamal Tabatabaie , Jeffrey R. LaRoche , Valery S. Kaper , John P. Bettencourt , Kelly P. Ip
- Applicant Address: US MA Waltham
- Assignee: Raytheon Company
- Current Assignee: Raytheon Company
- Current Assignee Address: US MA Waltham
- Agency: Daly, Crowley, Mofford & Durkee, LLP
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/20 ; H01S5/183 ; H01S5/026 ; H01L27/06 ; H01S5/22 ; H01S5/022 ; H01S5/02
Abstract:
A semiconductor structure, comprising: a substrate; a seed layer over an upper surface of the substrate; a semiconductor layer disposed over the seed layer; a transistor device in the semiconductor layer; wherein the substrate has an aperture therein, such aperture extending from a bottom surface of the substrate and terminating on a bottom surface of the seed layer; and an opto-electric structure disposed on the bottom surface of the seed layer.
Public/Granted literature
- US20100181601A1 SILICON BASED OPTO-ELECTRIC CIRCUITS Public/Granted day:2010-07-22
Information query
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