Invention Grant
US08853746B2 CMOS devices with stressed channel regions, and methods for fabricating the same
有权
具有应力沟道区的CMOS器件及其制造方法
- Patent Title: CMOS devices with stressed channel regions, and methods for fabricating the same
- Patent Title (中): 具有应力沟道区的CMOS器件及其制造方法
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Application No.: US11427495Application Date: 2006-06-29
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Publication No.: US08853746B2Publication Date: 2014-10-07
- Inventor: Xiangdong Chen , Thomas W. Dyer , Kenneth Settlemyer , Haining S. Yang
- Applicant: Xiangdong Chen , Thomas W. Dyer , Kenneth Settlemyer , Haining S. Yang
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Joseph P. Abate, Esq.
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L27/148 ; H01L29/66 ; H01L29/165 ; H01L29/786 ; H01L29/78 ; H01L27/12 ; H01L21/84 ; H01L29/04 ; H01L29/10 ; H01L21/762 ; H01L21/8238
Abstract:
The present invention relates to improved complementary metal-oxide-semiconductor (CMOS) devices with stressed channel regions. Specifically, each improved CMOS device comprises an field effect transistor (FET) having a channel region located in a semiconductor device structure, which has a top surface oriented along one of a first set of equivalent crystal planes and one or more additional surfaces oriented along a second, different set of equivalent crystal planes. Such additional surfaces can be readily formed by crystallographic etching. Further, one or more stressor layers with intrinsic compressive or tensile stress are located over the additional surfaces of the semiconductor device structure and are arranged and constructed to apply tensile or compressive stress to the channel region of the FET. Such stressor layers can be formed by pseudomorphic growth of a semiconductor material having a lattice constant different from the semiconductor device structure.
Public/Granted literature
- US20080001182A1 IMPROVED CMOS DEVICES WITH STRESSED CHANNEL REGIONS, AND METHODS FOR FABRICATING THE SAME Public/Granted day:2008-01-03
Information query
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