Invention Grant
US08853749B2 Ion implanted and self aligned gate structure for GaN transistors
有权
用于GaN晶体管的离子注入和自对准栅极结构
- Patent Title: Ion implanted and self aligned gate structure for GaN transistors
- Patent Title (中): 用于GaN晶体管的离子注入和自对准栅极结构
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Application No.: US13362669Application Date: 2012-01-31
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Publication No.: US08853749B2Publication Date: 2014-10-07
- Inventor: Alexander Lidow , Jianjun Cao , Robert Beach , Robert Strittmatter , Guang Y. Zhao , Alana Nakata
- Applicant: Alexander Lidow , Jianjun Cao , Robert Beach , Robert Strittmatter , Guang Y. Zhao , Alana Nakata
- Applicant Address: US CA El Segundo
- Assignee: Efficient Power Conversion Corporation
- Current Assignee: Efficient Power Conversion Corporation
- Current Assignee Address: US CA El Segundo
- Agency: Dickstein Shapiro LLP
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L21/336 ; H01L29/423 ; H01L29/778 ; H01L29/66 ; H01L21/265 ; H01L29/20
Abstract:
A self-aligned transistor gate structure that includes an ion-implanted portion of gate material surrounded by non-implanted gate material on each side. The gate structure may be formed, for example, by applying a layer of GaN material over an AlGaN barrier layer and implanting a portion of the GaN layer to create the gate structure that is laterally surrounded by the GaN layer.
Public/Granted literature
- US20120193688A1 ION IMPLANTED AND SELF ALIGNED GATE STRUCTURE FOR GaN TRANSISTORS Public/Granted day:2012-08-02
Information query
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