Invention Grant
- Patent Title: Resistive memory devices and methods of manufacturing the same
- Patent Title (中): 电阻式存储器件及其制造方法
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Application No.: US12230223Application Date: 2008-08-26
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Publication No.: US08853759B2Publication Date: 2014-10-07
- Inventor: Chang-bum Lee , Young-soo Park , Myung-jae Lee , Xianyu Wenxu , Bo-soo Kang , Seung-eon Ahn , Ki-hwan Kim
- Applicant: Chang-bum Lee , Young-soo Park , Myung-jae Lee , Xianyu Wenxu , Bo-soo Kang , Seung-eon Ahn , Ki-hwan Kim
- Applicant Address: KR Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2008-007082 20080123
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L27/24 ; G11C13/00
Abstract:
A resistive memory device includes a first electrode and a first insulation layer arranged on the first electrode. A portion of the first electrode is exposed through a first hole in the first insulation layer. A first variable resistance layer contacts the exposed portion of the first electrode and extends on the first insulation layer around the first hole. A first switching device electrically connects to the first resistive switching layer.
Public/Granted literature
- US20090184305A1 Resistive memory devices and methods of manufacturing the same Public/Granted day:2009-07-23
Information query
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