Invention Grant
US08853762B2 Structure for protecting metal-insulator-metal capacitor in memory device from charge damage
有权
用于保护存储器件中的金属 - 绝缘体 - 金属电容器免受电荷损坏的结构
- Patent Title: Structure for protecting metal-insulator-metal capacitor in memory device from charge damage
- Patent Title (中): 用于保护存储器件中的金属 - 绝缘体 - 金属电容器免受电荷损坏的结构
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Application No.: US12323202Application Date: 2008-11-25
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Publication No.: US08853762B2Publication Date: 2014-10-07
- Inventor: Kuo-Chi Tu , Kuo-Cheng Chiang
- Applicant: Kuo-Chi Tu , Kuo-Cheng Chiang
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L27/02 ; H01L49/02
Abstract:
A dynamic random access memory (DRAM) device has a metal-insulator-metal (MIM) capacitor electrically connected to a PN junction diode through a metal bridge for protecting the MIM capacitor from charge damage generated in back end of line (BEOL) plasma process.
Public/Granted literature
- US20100127316A1 STRUCTURE FOR PROTECTING METAL-INSULATOR-METAL CAPACITOR IN MEMORY DEVICE FROM CHARGE DAMAGE Public/Granted day:2010-05-27
Information query
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