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US08853773B2 Semiconductor device, memory system including the same, and method of manufacturing the same 有权
半导体器件，包括其的存储器系统及其制造方法

  • Patent Title: Semiconductor device, memory system including the same, and method of manufacturing the same
  • Patent Title (中): 半导体器件，包括其的存储器系统及其制造方法
  • Application No.: US13600020
    Application Date: 2012-08-30
  • Publication No.: US08853773B2
    Publication Date: 2014-10-07
  • Inventor: Sang Bum Lee
  • Applicant: Sang Bum Lee
  • Applicant Address: KR Gyeonggi-do
  • Assignee: SK Hynix Inc.
  • Current Assignee: SK Hynix Inc.
  • Current Assignee Address: KR Gyeonggi-do
  • Agency: IP & T Group LLP
  • Priority: KR10-2012-0063204 20120613
  • Main IPC: H01L29/788
  • IPC: H01L29/788 ;  H01L27/115
Semiconductor device, memory system including the same, and method of manufacturing the same
Abstract:
The semiconductor device includes a vertical channel layer formed on a substrate; conductive layer patterns and insulating layer patterns alternately formed around a length of each of the vertical channel layer; and a charge storing layer pattern formed between each of the vertical channel layers and the conductive layer patterns, where each of the charge storing layer patterns is isolated by the insulating layer patterns.
Abstract(Chinese):

半导体器件包括形成在衬底上的垂直沟道层; 交替地形成在每个垂直沟道层的长度上的导电层图案和绝缘层图案; 以及形成在每个垂直沟道层和导电层图案之间的电荷存储层图案，其中每个电荷存储层图案被绝缘层图案隔离。

Public/Granted literature
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Espacenet
IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00 专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/66 .按半导体器件的类型区分的
H01L29/68 ..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的（H01L29/96优先）
H01L29/76 ...单极器件
H01L29/772 ....场效应晶体管
H01L29/78 .....由绝缘栅产生场效应的
H01L29/788 ......带有浮栅的
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