Invention Grant
- Patent Title: Power transistor with controllable reverse diode
- Patent Title (中): 功率晶体管具有可控反向二极管
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Application No.: US13238576Application Date: 2011-09-21
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Publication No.: US08853776B2Publication Date: 2014-10-07
- Inventor: Franz Hirler , Lutz Goergens , Martin Feldtkeller
- Applicant: Franz Hirler , Lutz Goergens , Martin Feldtkeller
- Applicant Address: AT Villach
- Assignee: Infineon Technologies Austria AG
- Current Assignee: Infineon Technologies Austria AG
- Current Assignee Address: AT Villach
- Agency: Murphy, Bilak & Homiller, PLLC
- Main IPC: H01L29/772
- IPC: H01L29/772 ; H01L29/739 ; H01L29/78 ; H01L29/06 ; H01L29/40 ; H01L29/417

Abstract:
An electronic circuit includes a transistor device that can be operated in a reverse operation mode and a control circuit. The transistor device includes a source region, a drain region, a body region and a drift region, a source electrode electrically connected to the source region, a pn junction formed between the body region and the drift region, a gate electrode adjacent the body region and dielectrically insulated from the body region, and a depletion control structure adjacent the drift region. The depletion control structure has a control terminal and is configured to generate a depletion region in the drift region dependent on a drive signal received at the control terminal. The control circuit is coupled to the control terminal of the depletion control structure and configured to drive the depletion control structure to generate the depletion region when the transistor device is operated in the reverse operation mode.
Public/Granted literature
- US20130069710A1 POWER TRANSISTOR WITH CONTROLLABLE REVERSE DIODE Public/Granted day:2013-03-21
Information query
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