Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13567123Application Date: 2012-08-06
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Publication No.: US08853777B2Publication Date: 2014-10-07
- Inventor: Wan Cheul Shin
- Applicant: Wan Cheul Shin
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: William Park & Associates Patent Ltd.
- Priority: KR10-2011-0139989 20111222
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/336
Abstract:
A semiconductor device according an aspect of the present disclosure may include an isolation layer formed within a substrate and formed to define an active region, a junction formed in the active region, well regions formed under the isolation layer, and a plug embedded within the substrate between the junction and the well regions and formed extend to a greater depth than the well regions.
Public/Granted literature
- US20130161741A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2013-06-27
Information query
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