An integrated circuit including at least: a first MOS transistor; a second MOS transistor, arranged on the first MOS transistor, the second MOS transistor including a channel region in at least one semiconductor layer including two approximately parallel primary faces; a portion of at least one electrically conductive material electrically connected to a gate of the first transistor and arranged between the gate of the first transistor and the channel region of the second transistor; a dielectric layer arranged at least between the portion of the electrically conductive material and the channel region of the second transistor; and a section of the channel region of the second transistor in a plane parallel to the two primary faces of the semiconductor layer is included in a section of the portion of the electrically conductive material projected in said plane.