A semiconductor device includes a semiconductor switching element and a rectifier element. The semiconductor switching element includes a plurality of switching cells connected in parallel between a first and a second load terminal and is formed in a cell area of a first semiconductor layer. The rectifier element includes a plurality of rectifier cells connected in parallel between the first load terminal and an auxiliary terminal. The rectifier cells are formed in a second semiconductor layer parallel to the first semiconductor layer in a vertical projection of the cell area. The semiconductor device may integrate free-wheeling diodes for inductive loads and semiconductor switching elements for switching the inductive loads.