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US08853787B2 High voltage semiconductor device 有权
高压半导体器件

High voltage semiconductor device
Abstract:
A semiconductor device includes a substrate with one or more active regions and an isolation layer formed to surround an active region and to extend deeper into the substrate than the one or more active regions. The semiconductor further includes a gate electrode, which covers a portion of the active region, and which has one end portion thereof extending over the isolation layer.
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