Invention Grant
- Patent Title: High voltage semiconductor device
- Patent Title (中): 高压半导体器件
-
Application No.: US13690973Application Date: 2012-11-30
-
Publication No.: US08853787B2Publication Date: 2014-10-07
- Inventor: Jae-Han Cha , Kyung-Ho Lee , Sun-Goo Kim , Hyung-Suk Choi , Ju-Ho Kim , Jin-Young Chae , In-Taek Oh
- Applicant: Magnachip Semiconductor, Ltd.
- Applicant Address: KR Cheongju-si
- Assignee: Magnachip Semiconductor, Ltd.
- Current Assignee: Magnachip Semiconductor, Ltd.
- Current Assignee Address: KR Cheongju-si
- Agency: NSIP Law
- Priority: KR10-2009-0110927 20091117
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/94 ; H01L31/062 ; H01L31/113 ; H01L31/119 ; H01L29/78 ; H01L27/088

Abstract:
A semiconductor device includes a substrate with one or more active regions and an isolation layer formed to surround an active region and to extend deeper into the substrate than the one or more active regions. The semiconductor further includes a gate electrode, which covers a portion of the active region, and which has one end portion thereof extending over the isolation layer.
Public/Granted literature
- US20140151793A1 SEMICONDUCTOR DEVICE Public/Granted day:2014-06-05
Information query
IPC分类: