Invention Grant
- Patent Title: Replacement gate electrode with planar work function material layers
- Patent Title (中): 具有平面功函数材料层的替代栅电极
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Application No.: US14058774Application Date: 2013-10-21
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Publication No.: US08853788B2Publication Date: 2014-10-07
- Inventor: Dechao Guo , Shu-Jen Han , Keith Kwong Hon Wong , Jun Yuan
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Vazken Alexanian
- Main IPC: H01L21/70
- IPC: H01L21/70 ; H01L29/66 ; H01L29/78 ; H01L29/49 ; H01L29/423 ; H01L21/8238 ; H01L29/165 ; H01L29/417 ; H01L29/51
Abstract:
In a replacement gate scheme, a continuous material layer is deposited on a bottom surface and a sidewall surface in a gate cavity. A vertical portion of the continuous material layer is removed to form a gate component of which a vertical portion does not extend to a top of the gate cavity. The gate component can be employed as a gate dielectric or a work function material portion to form a gate structure that enhances performance of a replacement gate field effect transistor.
Public/Granted literature
- US20140042561A1 REPLACEMENT GATE ELECTRODE WITH PLANAR WORK FUNCTION MATERIAL LAYERS Public/Granted day:2014-02-13
Information query
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