Invention Grant
- Patent Title: Semiconductor nanowire structure reusing suspension pads
- Patent Title (中): 半导体纳米线结构重用悬挂垫
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Application No.: US13080390Application Date: 2011-04-05
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Publication No.: US08853790B2Publication Date: 2014-10-07
- Inventor: Josephine B. Chang , Michael A. Guillorn , Isaac Lauer , Jeffrey W. Sleight
- Applicant: Josephine B. Chang , Michael A. Guillorn , Isaac Lauer , Jeffrey W. Sleight
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Vazken Alexanian
- Main IPC: H01L51/48
- IPC: H01L51/48 ; H01L29/786 ; H01L27/12 ; H01L29/06 ; B82Y10/00 ; H01L29/423 ; H01L21/84
Abstract:
An integrated circuit apparatus is provided and includes first and second silicon-on-insulator (SOI) pads formed on an insulator substrate, each of the first and second SOI pads including an active area formed thereon, a nanowire suspended between the first and second SOI pads over the insulator substrate, one or more field effect transistors (FETs) operably disposed along the nanowire and a planar device operably disposed on at least one of the respective active areas formed on each of the first and second SOI pads.
Public/Granted literature
- US20120256242A1 SEMICONDUCTOR NANOWIRE STRUCTURE REUSING SUSPENSION PADS Public/Granted day:2012-10-11
Information query
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