Invention Grant
US08853797B2 MEMS devices and fabrication thereof 有权
MEMS器件及其制造

  • Patent Title: MEMS devices and fabrication thereof
  • Patent Title (中): MEMS器件及其制造
  • Application No.: US12990123
    Application Date: 2009-05-06
  • Publication No.: US08853797B2
    Publication Date: 2014-10-07
  • Inventor: Robertus T. F. van Schaijk
  • Applicant: Robertus T. F. van Schaijk
  • Applicant Address: NL Eindhoven
  • Assignee: NXP, B.V
  • Current Assignee: NXP, B.V
  • Current Assignee Address: NL Eindhoven
  • Priority: EP08103929 20080512
  • International Application: PCT/IB2009/051859 WO 20090506
  • International Announcement: WO2009/138906 WO 20091119
  • Main IPC: H01L27/12
  • IPC: H01L27/12 B81B3/00
MEMS devices and fabrication thereof
Abstract:
A MEMS device and method, comprising: a substrate; a beam; and a cavity located therebetween; the beam comprising a first beam layer and a second beam layer, the first beam layer being directly adjacent to the cavity, the second beam layer being directly adjacent to the first beam layer; the first beam layer comprising a metal or a metal alloy containing silicon; and the second beam layer comprising a metal or a metal alloy substantially not containing silicon. Preferably the second beam layer is thicker than the first beam layer e.g. at least five times thicker, and the first beam layer comprises a metal or alloy containing between 1% and 2% of silicon. The second beam layer provides desired mechanical and/or optical properties while the first beam layer prevents spiking.
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