Invention Grant
US08853798B2 Integrated circuit with sensor and method of manufacturing such an integrated circuit
有权
具有传感器的集成电路和制造这种集成电路的方法
- Patent Title: Integrated circuit with sensor and method of manufacturing such an integrated circuit
- Patent Title (中): 具有传感器的集成电路和制造这种集成电路的方法
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Application No.: US13556676Application Date: 2012-07-24
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Publication No.: US08853798B2Publication Date: 2014-10-07
- Inventor: Matthias Merz
- Applicant: Matthias Merz
- Applicant Address: NL Eindhoven
- Assignee: NXP, B.V.
- Current Assignee: NXP, B.V.
- Current Assignee Address: NL Eindhoven
- Priority: EP11176484 20110803
- Main IPC: H01L27/14
- IPC: H01L27/14 ; H01L21/00 ; H01L21/339 ; G01R27/08 ; G01N27/12 ; G01N33/18
Abstract:
Disclosed is an integrated circuit comprising a substrate (10) carrying a plurality of circuit elements; a metallization stack (12, 14, 16) interconnecting said circuit elements, said metallization stack comprising a patterned upper metallization layer comprising a first metal portion (20) and a second metal portion (21); a passivation stack (24, 26, 28) covering the metallization stack; a gas sensor including a sensing material portion (32, 74) on the passivation stack; a first conductive portion (38) extending through the passivation stack connecting a first region of the sensing material portion to the first metal portion; and a second conductive portion (40) extending through the passivation stack connecting a second region of the sensing material portion to the second metal portion. A method of manufacturing such an IC is also disclosed.
Public/Granted literature
- US20130032902A1 INTEGRATED CIRCUIT WITH SENSOR AND METHOD OF MANUFACTURING SUCH AN INTEGRATED CIRCUIT Public/Granted day:2013-02-07
Information query
IPC分类:
