发明授权
- 专利标题： MEMS devices and methods of forming the same
- 专利标题（中）： MEMS器件及其形成方法
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申请号： US13450728申请日： 2012-04-19
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公开(公告)号： US08853801B2公开(公告)日： 2014-10-07
- 发明人: Shang-Ying Tsai , Jung-Huei Peng , Hsin-Ting Huang , Yao-Te Huang , Lung Yuan Pan , Hung-Hua Lin
- 申请人： Shang-Ying Tsai , Jung-Huei Peng , Hsin-Ting Huang , Yao-Te Huang , Lung Yuan Pan , Hung-Hua Lin
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater and Matsil, L.L.P.
- 主分类号： H01L29/788
- IPC分类号： H01L29/788
摘要：
A device includes a substrate, a routing conductive line over the substrate, a dielectric layer over the routing conductive line, and an etch stop layer over the dielectric layer. A Micro-Electro-Mechanical System (MEMS) device has a portion over the etch stop layer. A contact plug penetrates through the etch stop layer and the dielectric layer. The contact plug connects the portion of the MEMS device to the routing conductive line. An escort ring is disposed over the etch stop layer and under the MEMS device, wherein the escort ring encircles the contact plug.
公开/授权文献
- US20130277770A1 MEMS Devices and Methods of Forming the Same 公开/授权日：2013-10-24
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