A method that includes forming a first layer having a first dopant concentration, the first layer having an integrated circuit region and a micro-electromechanical region and doping the micro-electromechanical region of the first layer to have a second dopant concentration is presented. The method includes forming a second layer having a third dopant concentration overlying the first layer, doping the second layer that overlies the micro-electromechanical region to have a fourth dopant concentration, forming a micro-electromechanical structure in the micro-electromechanical region using the first and second layers, and forming active components in the integrated circuit region using the second layer.