Invention Grant
- Patent Title: Strain measurement test module
- Patent Title (中): 应变测量测试模块
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Application No.: US13169987Application Date: 2011-06-27
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Publication No.: US08853805B2Publication Date: 2014-10-07
- Inventor: Jayhoon Chung , Catherine Beth Vartuli , Guoda Lian
- Applicant: Jayhoon Chung , Catherine Beth Vartuli , Guoda Lian
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Jacqueline J. Garner; Frederick J. Telecky, Jr.
- Main IPC: G01L1/00
- IPC: G01L1/00 ; G01P15/08 ; H01L27/14 ; H01L21/66 ; G01B15/06 ; G01B7/16
Abstract:
A test structure for measuring strain in the channel of transistors. A method of correlating transistor performance with channel strain.
Public/Granted literature
- US20120325009A1 STRAIN MEASUREMENT TEST MODULE Public/Granted day:2012-12-27
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