Invention Grant
- Patent Title: Capacitor of nonvolatile memory device
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Application No.: US13288399Application Date: 2011-11-03
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Publication No.: US08853823B2Publication Date: 2014-10-07
- Inventor: Je il Ryu
- Applicant: Je il Ryu
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2010-0139179 20101230
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L27/115 ; H01L29/94 ; H01L49/02
Abstract:
The capacitor of a nonvolatile memory device includes first and second electrodes formed in the capacitor region of a semiconductor substrate to respectively have consecutive concave and convex shape of side surfaces formed along each other and a dielectric layer formed between the first and the second electrodes.
Public/Granted literature
- US20120168905A1 CAPACITOR OF NONVOLATILE MEMORY DEVICE Public/Granted day:2012-07-05
Information query
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