Invention Grant
US08853828B2 Epitaxial substrate for semiconductor device, method for manufacturing epitaxial substrate for semiconductor device, and semiconductor device
有权
用于半导体器件的外延衬底，用于制造用于半导体器件的外延衬底的方法和半导体器件
- Patent Title: Epitaxial substrate for semiconductor device, method for manufacturing epitaxial substrate for semiconductor device, and semiconductor device
- Patent Title (中): 用于半导体器件的外延衬底，用于制造用于半导体器件的外延衬底的方法和半导体器件
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Application No.: US13353759Application Date: 2012-01-19
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Publication No.: US08853828B2Publication Date: 2014-10-07
- Inventor: Shigeaki Sumiya , Makoto Miyoshi , Tomohiko Sugiyama , Mikiya Ichimura , Yoshitaka Kuraoka , Mitsuhiro Tanaka
- Applicant: Shigeaki Sumiya , Makoto Miyoshi , Tomohiko Sugiyama , Mikiya Ichimura , Yoshitaka Kuraoka , Mitsuhiro Tanaka
- Applicant Address: JP Aichi
- Assignee: NGK Insulators, Ltd.
- Current Assignee: NGK Insulators, Ltd.
- Current Assignee Address: JP Aichi
- Agency: Cermak Nakajima LLP
- Agent Tomoko Nakajima
- Priority: JP2009-184066 20090807
- Main IPC: H01L29/20
- IPC: H01L29/20 ; H01L21/02 ; C30B29/40 ; C30B25/18 ; H01L29/872 ; H01L29/778
Abstract:
An epitaxial substrate, in which a group of group-III nitride layers is formed on a single-crystal silicon substrate so that a crystal plane is approximately parallel to a substrate surface, comprises: a first group-III nitride layer formed of AlN on the base substrate; a second group-III nitride layer formed of InxxAlyyGazzN (xx+yy+zz=1, 0≦xx≦1, 0
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