Invention Grant
US08853829B2 Epitaxial substrate for semiconductor device, method for manufacturing epitaxial substrate for semiconductor device, and semiconductor device
有权
用于半导体器件的外延衬底，用于制造用于半导体器件的外延衬底的方法和半导体器件
- Patent Title: Epitaxial substrate for semiconductor device, method for manufacturing epitaxial substrate for semiconductor device, and semiconductor device
- Patent Title (中): 用于半导体器件的外延衬底，用于制造用于半导体器件的外延衬底的方法和半导体器件
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Application No.: US13789993Application Date: 2013-03-08
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Publication No.: US08853829B2Publication Date: 2014-10-07
- Inventor: Makoto Miyoshi , Mikiya Ichimura , Sota Maehara , Mitsuhiro Tanaka
- Applicant: NGK Insulators, Ltd.
- Applicant Address: JP Nagoya
- Assignee: NGK Insulators, Ltd
- Current Assignee: NGK Insulators, Ltd
- Current Assignee Address: JP Nagoya
- Agency: Burr & Brown, PLLC
- Priority: JP2010-203062 20100910
- Main IPC: H01L29/20
- IPC: H01L29/20 ; H01L21/20 ; H01L21/36 ; C30B29/40 ; C30B25/18 ; H01L21/02 ; H01L29/06 ; C30B23/02 ; H01L29/15 ; C23C16/30
Abstract:
Provided is a crack-free epitaxial substrate having a small amount of dislocations in which a silicon substrate is used as a base substrate. An epitaxial substrate includes a substrate made of (111) single crystal silicon and a base layer group in which a plurality of base layers are laminated. Each of the plurality of base layers includes a first group-III nitride layer made of AlN and a second group-III nitride layer made of AlyyGazzN formed on the first group-III nitride layer. The first group-III nitride layer has many crystal defects. An interface between the first and second group-III nitride layers is a three-dimensional concavo-convex surface. In the base layer other than the base layer formed immediately above the base substrate, the first group-III nitride layer has a thickness of 50 nm or more and 100 nm or less and the second group-III nitride layer satisfies 0≦yy≦0.2.
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