Invention Grant
- Patent Title: Interconnect structure and method for forming the same
- Patent Title (中): 互连结构及其形成方法
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Application No.: US13460279Application Date: 2012-04-30
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Publication No.: US08853831B2Publication Date: 2014-10-07
- Inventor: Po-Cheng Shih , Yu-Yun Peng , Chia Cheng Chou , Joung-Wei Liou
- Applicant: Po-Cheng Shih , Yu-Yun Peng , Chia Cheng Chou , Joung-Wei Liou
- Applicant Address: TW
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW
- Agency: Lowe Hauptman & Ham, LLP
- Main IPC: H01L23/58
- IPC: H01L23/58 ; H01L23/52 ; H01L21/768 ; H01L21/02
Abstract:
A interconnect structure includes a conductive layer formed in a dielectric layer. An adhesion layer is formed between the dielectric layer and a substrate. The adhesion layer has a carbon content ratio greater than a carbon content ratio of the dielectric layer.
Public/Granted literature
- US20130256903A1 INTERCONNECT STRUCTURE AND METHOD FOR FORMING THE SAME Public/Granted day:2013-10-03
Information query
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