Invention Grant
- Patent Title: Methods and apparatus for reducing coupling in a MOS device
- Patent Title (中): 减少MOS器件耦合的方法和装置
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Application No.: US12358015Application Date: 2009-01-22
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Publication No.: US08853832B2Publication Date: 2014-10-07
- Inventor: Adalberto Cantoni
- Applicant: Adalberto Cantoni
- Applicant Address: US TX Coppell
- Assignee: STMicroelectronics Inc.
- Current Assignee: STMicroelectronics Inc.
- Current Assignee Address: US TX Coppell
- Agency: Seed IP Law Group PLLC
- Main IPC: H01L23/552
- IPC: H01L23/552 ; H01L23/522 ; H01L29/78
Abstract:
Mutual capacitances between regions of a MOS device become substantial factors that limit the speed and performance of the device as the device dimensions are reduced in size. A MOS transistor with a shielding structure formed above the gate is described. The shielding structure is connected to ground and is configured to reduce at least some of these mutual capacitances.
Public/Granted literature
- US20100182078A1 METHODS AND APPARATUS FOR REDUCING COUPLING IN A MOS DEVICE Public/Granted day:2010-07-22
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