Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13358660Application Date: 2012-01-26
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Publication No.: US08853851B2Publication Date: 2014-10-07
- Inventor: Takumi Ihara
- Applicant: Takumi Ihara
- Applicant Address: JP Yokohama
- Assignee: Fujitsu Semiconductor Limited
- Current Assignee: Fujitsu Semiconductor Limited
- Current Assignee Address: JP Yokohama
- Agency: Fujitsu Patent Center
- Priority: JP2011-068176 20110325
- Main IPC: H01L23/34
- IPC: H01L23/34 ; H01L23/00 ; H01L23/367 ; H01L23/552
Abstract:
A semiconductor device includes a substrate, a semiconductor element disposed on the substrate, and a heat conductive member composed of a solder material. The heat conductive member covers the semiconductor element, and is connected to a connection pad formed on the substrate. A heat radiator is disposed on the heat conductive member. The heat conductive member thermally connecting the semiconductor element to the heat radiator reduces the risk that electromagnetic noise may be emitted from or may be incident on the semiconductor element.
Public/Granted literature
- US20120241942A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2012-09-27
Information query
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