Invention Grant
- Patent Title: Curing low-k dielectrics for improving mechanical strength
- Patent Title (中): 固化低k电介质以提高机械强度
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Application No.: US13571276Application Date: 2012-08-09
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Publication No.: US08853858B2Publication Date: 2014-10-07
- Inventor: Joung-Wei Liou , Keng-Chu Lin , Shwang-Ming Jeng
- Applicant: Joung-Wei Liou , Keng-Chu Lin , Shwang-Ming Jeng
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater and Matsil, L.L.P.
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/00 ; H01L21/31 ; H01L23/532 ; H01L21/02 ; H01L23/522 ; H01L21/768
Abstract:
An integrated circuit structure including reflective metal pads is provided. The integrated circuit structure includes a semiconductor substrate; a first low-k dielectric layer overlying the semiconductor substrate, wherein the first low-k dielectric layer is a top low-k dielectric layer; a second low-k dielectric layer immediately underlying the first low-k dielectric layer; and a reflective metal pad in the second low-k dielectric layer.
Public/Granted literature
- US20120306098A1 Curing Low-k Dielectrics for Improving Mechanical Strength Public/Granted day:2012-12-06
Information query
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