Invention Grant
- Patent Title: Contact structures for semiconductor transistors
- Patent Title (中): 半导体晶体管的接触结构
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Application No.: US13330817Application Date: 2011-12-20
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Publication No.: US08853862B2Publication Date: 2014-10-07
- Inventor: Emre Alptekin , Reinaldo Vega
- Applicant: Emre Alptekin , Reinaldo Vega
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Yuanmin Cai
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L23/48 ; H01L23/52 ; H01L29/40 ; H01L21/00 ; H01L21/4763 ; H01L21/44 ; H01L21/311
Abstract:
Embodiments of the present invention provide a contact structure for transistor. The contact structure includes a first epitaxial-grown region between a first and a second gate of, respectively, a first and a second transistor; a second epitaxial-grown region directly on top of the first epitaxial-grown region with the second epitaxial-grown region having a width that is wider than that of the first epitaxial-grown region; and a silicide region formed on a top portion of the second epitaxial-grown region with the silicide region having an interface, with rest of the second epitaxial-grown region, that is wider than that of the first epitaxial-grown region. In one embodiment, the second epitaxial-grown region is at a level above a top surface of the first and second gates of the first and second transistors.
Public/Granted literature
- US20130154026A1 CONTACT STRUCTURES FOR SEMICONDUCTOR TRANSISTORS Public/Granted day:2013-06-20
Information query
IPC分类:
