Invention Grant
- Patent Title: Encapsulant for a semiconductor device
- Patent Title (中): 用于半导体器件的封装剂
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Application No.: US14170067Application Date: 2014-01-31
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Publication No.: US08853867B2Publication Date: 2014-10-07
- Inventor: Sheila F. Chopin , Varughese Mathew , Leo M. Higgins, III , Chu-Chung Lee
- Applicant: Freescale Semiconductor, Inc.
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Main IPC: H01L23/532
- IPC: H01L23/532 ; H01L23/48 ; H01L23/29 ; H01L23/28
Abstract:
A mold compound is provided for encapsulating a semiconductor device (101). The mold compound comprises at least approximately 70% by weight silica fillers, at least approximately 10% by weight epoxy resin system, and beneficial ions that are beneficial with respect to copper ball bond corrosion. A total level of the beneficial ions in the mold compound is at least approximately 100 ppm.
Public/Granted literature
- US20140145339A1 ENCAPSULANT FOR A SEMICONDUCTOR DEVICE Public/Granted day:2014-05-29
Information query
IPC分类:
