Invention Grant
US08854033B2 Current sensor, inverter circuit, and semiconductor device having the same
有权
电流传感器,逆变器电路和具有相同功能的半导体器件
- Patent Title: Current sensor, inverter circuit, and semiconductor device having the same
- Patent Title (中): 电流传感器,逆变器电路和具有相同功能的半导体器件
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Application No.: US13150764Application Date: 2011-06-01
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Publication No.: US08854033B2Publication Date: 2014-10-07
- Inventor: Satoshi Shiraki , Norihito Tokura , Shigeki Takahashi , Masahiro Yamamoto , Akira Yamada , Hiroyasu Kudo , Youichi Ashida , Akio Nakagawa
- Applicant: Satoshi Shiraki , Norihito Tokura , Shigeki Takahashi , Masahiro Yamamoto , Akira Yamada , Hiroyasu Kudo , Youichi Ashida , Akio Nakagawa
- Applicant Address: JP Kariya
- Assignee: DENSO CORPORATION
- Current Assignee: DENSO CORPORATION
- Current Assignee Address: JP Kariya
- Agency: Posz Law Group, PLC
- Priority: JP2010-129319 20100604; JP2011-15345 20110127; JP2011-27411 20110210
- Main IPC: G01R1/20
- IPC: G01R1/20

Abstract:
A semiconductor device having a lateral semiconductor element includes a semiconductor substrate, a first electrode on the substrate, a second electrode on the substrate, and an isolation structure located in the substrate to divide the substrate into a first island and a second island electrically insulated from the first island. The lateral semiconductor element includes a main cell located in the first island and a sense cell located in the second island. The main cell causes a first current to flow between the first electrode and the second electrode so that the first current flows in a lateral direction along the surface of the substrate. The first current is detected by detecting a second current flowing though the sense cell.
Public/Granted literature
- US08791690B2 Current sensor, inverter circuit, and semiconductor device having the same Public/Granted day:2014-07-29
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