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US08854067B2 Circular transmission line methods compatible with combinatorial processing of semiconductors 有权
圆形传输线方法兼容半导体的组合处理

Circular transmission line methods compatible with combinatorial processing of semiconductors
Abstract:
Methods and structures are described for determining contact resistivities and Schottky barrier heights for conductors deposited on semiconductor wafers that can be combined with combinatorial processing, allowing thereby numerous processing conditions and materials to be tested concurrently. Methods for using multi-ring as well as single-ring CTLM structures to cancel parasitic resistance are also described, as well as structures and processes for inline monitoring of properties.
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