Invention Grant
- Patent Title: High temperature-low leakage probe apparatus and method of manufacturing same
- Patent Title (中): 高温低漏探头装置及其制造方法
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Application No.: US13153163Application Date: 2011-06-03
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Publication No.: US08854072B2Publication Date: 2014-10-07
- Inventor: Hai Dau , Rupinder S. Mand , Jaspreet Singh , John Williamson
- Applicant: Hai Dau , Rupinder S. Mand , Jaspreet Singh , John Williamson
- Agent Mark Gonzales
- Main IPC: G01R1/067
- IPC: G01R1/067

Abstract:
In one embodiment, the present invention includes an apparatus for contacting a plurality of contact locations of a semiconductor device. The apparatus includes a housing, a support member, a plurality of probe members, and an adhesive substance. The housing has a plurality of apertures that provides a low leakage pathway for high frequency signals to reach the semiconductor device through the plurality of probe members. The plurality of probe members are aligned on the support member and the adhesive substance secures the plurality of probe members to the supporting member. The housing, supporting member, and adhesive substance match in thermal expansion to reduce the error in alignment between the plurality of contact locations and the plurality of probe members over a temperature variance.
Public/Granted literature
- US20120306524A1 High Temperature- Low Leakage Probe Apparatus and Method of Manufacturing Same Public/Granted day:2012-12-06
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