Invention Grant
- Patent Title: Method for controlling two electrically series-connected reverse conductive IGBTs of a half bridge
- Patent Title (中): 用于控制半桥的两个电串联反向导通IGBT的方法
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Application No.: US13984790Application Date: 2012-01-13
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Publication No.: US08854109B2Publication Date: 2014-10-07
- Inventor: Hans-Günter Eckel
- Applicant: Hans-Günter Eckel
- Applicant Address: DE München
- Assignee: Siemens Aktiengesellschaft
- Current Assignee: Siemens Aktiengesellschaft
- Current Assignee Address: DE München
- Agency: Henry M Feiereisen LLC
- Priority: DE102011003938 20110210
- International Application: PCT/EP2012/050503 WO 20120113
- International Announcement: WO2012/107258 WO 20120816
- Main IPC: H03K17/30
- IPC: H03K17/30 ; H03K17/16 ; H03K17/567 ; H02M1/084

Abstract:
A method for controlling two electrically series-connected reverse-conductive (RC) IGBTs (RC-IBGT) of a half bridge is disclosed, wherein an operating DC voltage is applied across the series connection and one of the two series-connected reverse-conductive IGBTs operates in IGBT mode and another of the two series-connected reverse-conductive IGBTs operates in diode mode, and wherein each of the two reverse-conductive IGBTs has three switching states “+15V”, “0V”, “−15V”. The RC-IGBT T1 operated in diode mode does not go into the switching state (−15V) of highly charged carrier concentration, but instead into a state of medium charge carrier concentration associated with the switching state “0V”, and not into the switching state “−15V”, as is known from conventional methods. This reduces the reverse-recovery without adversely affecting the forward voltage.
Public/Granted literature
- US20130321062A1 METHOD FOR CONTROLLING TWO ELECTRICALLY SERIES-CONNECTED REVERSE CONDUCTIVE IGBTS OF A HALF BRIDGE Public/Granted day:2013-12-05
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