Invention Grant
- Patent Title: FET drive circuit and FET module
- Patent Title (中): FET驱动电路和FET模块
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Application No.: US13785000Application Date: 2013-03-05
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Publication No.: US08854112B2Publication Date: 2014-10-07
- Inventor: Kentaro Ikeda
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2012-068509 20120324
- Main IPC: H03K17/687
- IPC: H03K17/687 ; H03K5/08 ; H03K17/16 ; H03K17/082

Abstract:
According to an embodiment, an FET drive circuit includes an FET, a first circuit, a resistor and a third rectifying device. The first circuit includes a first rectifying device, a second rectifying device and a capacitive element sequentially provided in series from a drain to a gate of the FET, the first rectifying device allowing a forward electric current flowing from the drain to the gate, and the second rectifying device having a predetermined breakdown voltage with respect to the electric current from the drain to the gate. The resistor is provided between a power source and a connecting point of the second rectifying device and the capacitive element; and the third rectifying device provided between a source and a gate of the FET.
Public/Granted literature
- US20130249606A1 FET DRIVE CIRCUIT AND FET MODULE Public/Granted day:2013-09-26
Information query
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