Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US13792387Application Date: 2013-03-11
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Publication No.: US08854117B2Publication Date: 2014-10-07
- Inventor: Kazuto Takao , Hiroshi Kono , Takuo Kikuchi
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2012-210188 20120924
- Main IPC: H03K3/01
- IPC: H03K3/01 ; G05F3/20

Abstract:
According to one embodiment, a semiconductor device includes: a substrate; a first circuit portion; and a second circuit portion. The first circuit portion includes: a first and a second switching elements, and a first and a second diodes. The second circuit portion includes a third and a fourth switching elements, and a third and a fourth diodes. The first switching element is juxtaposed with the second switching element in a first direction, and is juxtaposed with the fourth switching element in a second direction. The third switching element is juxtaposed with the fourth switching element in the first direction, and is juxtaposed with the second switching element in the second direction. A voltage is applied to electrodes of the first and third switching elements. A voltage of a polarity opposite the first voltage is applied to electrodes of the second and fourth switching elements.
Public/Granted literature
- US20140084993A1 SEMICONDUCTOR DEVICE Public/Granted day:2014-03-27
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