Invention Grant
- Patent Title: Regulated charge pump circuit
- Patent Title (中): 调节电荷泵电路
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Application No.: US13924775Application Date: 2013-06-24
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Publication No.: US08854119B2Publication Date: 2014-10-07
- Inventor: Ming Jiang , Jackson Ding
- Applicant: STMicroelectronics R&D Co. Ltd. (Shanghai)
- Applicant Address: CN Shanghai
- Assignee: STMicroelectronics R&D (Shanghai) Co. Ltd.
- Current Assignee: STMicroelectronics R&D (Shanghai) Co. Ltd.
- Current Assignee Address: CN Shanghai
- Agency: Gardere Wynne Sewell LLP
- Priority: CN201210239771 20120705
- Main IPC: H02M3/07
- IPC: H02M3/07

Abstract:
A circuit includes a charge pump, a first level shifter, a second level shifter, a voltage follower and a current mirror. The charge pump is configured to generate a voltage difference between the input node and the output node. The first level shifter is coupled to the charge pump output and configured to apply a first voltage variation to the charge pump output in response to a bias current. The second level shifter is coupled to the input node and configured to apply a second voltage variation to the charge pump input. The voltage follower is configured to equalize outputs from the first and second level shifters and provide a difference current which is multiplied by the current multiplier to generate a charging current applied to the charge pump.
Public/Granted literature
- US20140009220A1 REGULATED CHARGE PUMP CIRCUIT Public/Granted day:2014-01-09
Information query
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