Invention Grant
- Patent Title: Bias circuit
- Patent Title (中): 偏置电路
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Application No.: US14164484Application Date: 2014-01-27
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Publication No.: US08854143B2Publication Date: 2014-10-07
- Inventor: Jean-Jacques Bouny
- Applicant: NXP B.V.
- Applicant Address: NL Eindhoven
- Assignee: NXP, B.V.
- Current Assignee: NXP, B.V.
- Current Assignee Address: NL Eindhoven
- Priority: EP13290021 20130128
- Main IPC: H03F3/04
- IPC: H03F3/04 ; H03F1/02

Abstract:
Proposed is a bias circuit for a transistor in a C class amplifier. The bias circuit comprises: a class AB amplifier bias voltage generating means adapted to generate a bias voltage at an output terminal; and a transistor connected between the output terminal and a first reference voltage, the control terminal of the transistor being connected to a second reference voltage via a switch. Closure of the switch connects the second reference voltage to the control terminal of the transistor to cause a shift in the bias voltage generated by the class AB amplifier bias voltage generating means to achieve a predetermined class C bias voltage at the output terminal.
Public/Granted literature
- US20140210557A1 BIAS CIRCUIT Public/Granted day:2014-07-31
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