Invention Grant
US08854143B2 Bias circuit 有权
偏置电路

  • Patent Title: Bias circuit
  • Patent Title (中): 偏置电路
  • Application No.: US14164484
    Application Date: 2014-01-27
  • Publication No.: US08854143B2
    Publication Date: 2014-10-07
  • Inventor: Jean-Jacques Bouny
  • Applicant: NXP B.V.
  • Applicant Address: NL Eindhoven
  • Assignee: NXP, B.V.
  • Current Assignee: NXP, B.V.
  • Current Assignee Address: NL Eindhoven
  • Priority: EP13290021 20130128
  • Main IPC: H03F3/04
  • IPC: H03F3/04 H03F1/02
Bias circuit
Abstract:
Proposed is a bias circuit for a transistor in a C class amplifier. The bias circuit comprises: a class AB amplifier bias voltage generating means adapted to generate a bias voltage at an output terminal; and a transistor connected between the output terminal and a first reference voltage, the control terminal of the transistor being connected to a second reference voltage via a switch. Closure of the switch connects the second reference voltage to the control terminal of the transistor to cause a shift in the bias voltage generated by the class AB amplifier bias voltage generating means to achieve a predetermined class C bias voltage at the output terminal.
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