Invention Grant
- Patent Title: Serial advanced technology attachment dual in-line memory module
- Patent Title (中): 串行高级技术附件双列直插式内存模块
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Application No.: US13284969Application Date: 2011-10-30
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Publication No.: US08854833B2Publication Date: 2014-10-07
- Inventor: Chun-Po Chen , Chia-Ming Yeh
- Applicant: Chun-Po Chen , Chia-Ming Yeh
- Applicant Address: TW New Taipei
- Assignee: Hon Hai Precision Industry Co., Ltd.
- Current Assignee: Hon Hai Precision Industry Co., Ltd.
- Current Assignee Address: TW New Taipei
- Agency: Novak Druce Connolly Bove + Quigg LLP
- Priority: TW100137404 20111014
- Main IPC: H05K1/11
- IPC: H05K1/11 ; H05K1/14 ; G06F1/18

Abstract:
A serial advanced technology attachment (SATA) dual-in-line memory module (DIMM) includes a circuit board. A control chip and a number of storage chips are arranged on the circuit board. First and second extending boards extend from an end of the circuit board and are coplanar with the circuit board. A space is defined between the first and the second extending boards. A first edge connector is arranged on the first extending board and connected to the control chip. A second edge connector is arranged on bottom edges of the second extending board and the circuit board. A third edge connector is arranged on a top edge of the circuit board opposite to the bottom edge of the circuit board.
Public/Granted literature
- US20130094167A1 SERIAL ADVANCED TECHNOLOGY ATTACHMENT DUAL IN-LINE MEMORY MODULE Public/Granted day:2013-04-18
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