Invention Grant
- Patent Title: Signal level conversion in nonvolatile bitcell array
- Patent Title (中): 非易失性位单元阵列中的信号电平转换
-
Application No.: US13753819Application Date: 2013-01-30
-
Publication No.: US08854858B2Publication Date: 2014-10-07
- Inventor: Steven Craig Bartling , Sudhanshu Khanna
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent John R. Pessetto; Frederick J. Telecky, Jr.
- Main IPC: G11C11/22
- IPC: G11C11/22 ; H03K3/02

Abstract:
A system on chip (SoC) includes one or more core logic blocks that are configured to operate on a lower supply voltage and a memory array configured to operate on a higher supply voltage. Each bitcell in the memory has two ferroelectric capacitors connected in series between a first plate line and a second plate line to form a node Q. A data bit voltage is transferred to the node Q by activating a write driver to provide the data bit voltage responsive to the lower supply voltage. The data bit voltage is boosted on the node Q by activating a sense amp coupled to node Q of the selected bit cell, such that the sense amp senses the data bit voltage on the node Q and in response increases the data bit voltage on the node Q to the higher supply voltage.
Public/Granted literature
- US20140210535A1 Signal Level Conversion in Nonvolatile Bitcell Array Public/Granted day:2014-07-31
Information query