Invention Grant
- Patent Title: Mixed mode programming for phase change memory
- Patent Title (中): 相变存储器的混合模式编程
-
Application No.: US13512008Application Date: 2009-12-29
-
Publication No.: US08854861B2Publication Date: 2014-10-07
- Inventor: Ferdinando Bedeschi
- Applicant: Ferdinando Bedeschi
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Knobbe, Martens, Olson & Bear LLP
- International Application: PCT/IT2009/000583 WO 20091229
- International Announcement: WO2011/080769 WO 20110707
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C13/00
Abstract:
Subject matter disclosed herein relates to a memory device, and more particularly to write performance of a phase change memory.
Public/Granted literature
- US20130003450A1 MIXED MODE PROGRAMMING FOR PHASE CHANGE MEMORY Public/Granted day:2013-01-03
Information query
