Invention Grant
- Patent Title: Nonvolatile memory element and nonvolatile memory device
- Patent Title (中): 非易失性存储器元件和非易失性存储器件
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Application No.: US13982398Application Date: 2012-11-08
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Publication No.: US08854864B2Publication Date: 2014-10-07
- Inventor: Zhiqiang Wei , Takeki Ninomiya , Takeshi Takagi
- Applicant: Panasonic Corporation
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: Wenderoth, Lind & Ponack, LLP
- Priority: JP2011-264799 20111202
- International Application: PCT/JP2012/007162 WO 20121108
- International Announcement: WO2013/080452 WO 20130606
- Main IPC: G11C11/00
- IPC: G11C11/00 ; H01L45/00 ; G11C13/00 ; H01L27/24
Abstract:
A nonvolatile memory element includes: a first electrode; a second electrode; and a variable resistance layer comprising a metal oxide positioned between the first electrode and the second electrode. The variable resistance layer includes: a first oxide layer having a resistivity ρx, on the first electrode; a second oxide layer having a resistivity ρy (ρx
Public/Granted literature
- US20140050013A1 NONVOLATILE MEMORY ELEMENT AND NONVOLATILE MEMORY DEVICE Public/Granted day:2014-02-20
Information query
