Invention Grant
- Patent Title: Memory device and driving method of the memory device
- Patent Title (中): 存储器件的存储器件和驱动方法
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Application No.: US13442113Application Date: 2012-04-09
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Publication No.: US08854867B2Publication Date: 2014-10-07
- Inventor: Yasuhiko Takemura
- Applicant: Yasuhiko Takemura
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2011-088815 20110413
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C11/412

Abstract:
A memory device which can reduce power consumption and a driving method thereof are disclosed. In a memory element including an inverter and the like, a capacitor for holding data and a capacitor switching element for controlling store and release of charge in the capacitor are provided. The capacitor switching element is designed so that the off-state current is sufficiently low. Therefore, even when power supply of the inverter is stopped after charge corresponding to data is stored in the capacitor, data can be held for a long period of time. In order to return data, potentials of output and input terminals of the inverter are set to a precharge potential, then charge in the capacitor is released, and power is supplied to the inverter. A switching element for supplying the precharge potential may be provided.
Public/Granted literature
- US20120262982A1 MEMORY DEVICE AND DRIVING METHOD OF THE MEMORY DEVICE Public/Granted day:2012-10-18
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