Invention Grant
US08854870B2 Magnetoresistive random access memory (MRAM) die including an integrated magnetic security structure
有权
包括集成磁安全结构的磁阻随机存取存储器（MRAM）芯片
- Patent Title: Magnetoresistive random access memory (MRAM) die including an integrated magnetic security structure
- Patent Title (中): 包括集成磁安全结构的磁阻随机存取存储器（MRAM）芯片
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Application No.: US13419066Application Date: 2012-03-13
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Publication No.: US08854870B2Publication Date: 2014-10-07
- Inventor: Romney R. Katti , James L. Tucker , Anuj Kohli
- Applicant: Romney R. Katti , James L. Tucker , Anuj Kohli
- Applicant Address: US NJ Morristown
- Assignee: Honeywell International Inc.
- Current Assignee: Honeywell International Inc.
- Current Assignee Address: US NJ Morristown
- Agency: Shumaker & Sieffert, P.A.
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
An MRAM die may include a first write line, a second write line, an MRAM cell disposed between the first write line and the second write line, and a magnetic security structure adjacent to the MRAM cell. The magnetic security structure may include a permanent magnetic layer and a soft magnetic layer.
Public/Granted literature
- US20130242646A1 MAGNETORESISTIVE RANDOM ACCESS MEMORY (MRAM) DIE INCLUDING AN INTEGRATED MAGNETIC SECURITY STRUCTURE Public/Granted day:2013-09-19
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