Invention Grant
- Patent Title: Nonvolatile semiconductor memory device
- Patent Title (中): 非易失性半导体存储器件
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Application No.: US13603842Application Date: 2012-09-05
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Publication No.: US08854878B2Publication Date: 2014-10-07
- Inventor: Mitsuaki Honma
- Applicant: Mitsuaki Honma
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2011-270386 20111209
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G11C11/56 ; G11C16/34 ; G11C16/10
Abstract:
According to one embodiment, a nonvolatile semiconductor memory device includes a memory cell array and a controller. The controller is configured to perform a verify operation using a first verification voltage and a second verification voltage (first verification voltage
Public/Granted literature
- US20130235657A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2013-09-12
Information query
