Invention Grant
US08854879B2 Method of programming a nonvolatile memory device and nonvolatile memory device performing the method
有权
执行该方法的非易失性存储器件和非易失性存储器件的编程方法
- Patent Title: Method of programming a nonvolatile memory device and nonvolatile memory device performing the method
- Patent Title (中): 执行该方法的非易失性存储器件和非易失性存储器件的编程方法
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Application No.: US13755448Application Date: 2013-01-31
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Publication No.: US08854879B2Publication Date: 2014-10-07
- Inventor: Dong-Kyo Shim , Min-Seok Kim , Tae-Young Kim , Ki-Tae Park , Jae-Yong Jeong
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2012-0048910 20120509
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G11C11/56 ; G11C16/10 ; G11C16/34
Abstract:
A method of programming a nonvolatile memory device including multi-level cells that store multi-bit data, includes performing a pre-programming operation that programs at least some of the multi-level cells to a plurality of intermediate states which are different from an erased state, and performing a main programming operation that programs the multi-level cells to a plurality of target states corresponding to the multi-bit data. At least some of the intermediate program states have threshold voltage distributions that partially overlap each other.
Public/Granted literature
- US20130301352A1 METHOD OF PROGRAMMING A NONVOLATILE MEMORY DEVICE AND NONVOLATILE MEMORY DEVICE PERFORMING THE METHOD Public/Granted day:2013-11-14
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