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US08854894B2 Semiconductor memory device and program method thereof 有权
半导体存储器件及其程序方法

  • Patent Title: Semiconductor memory device and program method thereof
  • Patent Title (中): 半导体存储器件及其程序方法
  • Application No.: US13830780
    Application Date: 2013-03-14
  • Publication No.: US08854894B2
    Publication Date: 2014-10-07
  • Inventor: Byoung In Joo
  • Applicant: SK hynix Inc.
  • Applicant Address: KR Icheon
  • Assignee: SK Hynix Inc.
  • Current Assignee: SK Hynix Inc.
  • Current Assignee Address: KR Icheon
  • Priority: KR10-2012-0141724 20121207
  • Main IPC: G11C16/06
  • IPC: G11C16/06 ;  G11C16/10 ;  G11C16/34
Semiconductor memory device and program method thereof
Abstract:
A program method of a semiconductor memory device includes performing a verify operation on selected memory cells by applying a selected word line voltage to a selected word line, continuously increasing the selected word line voltage without discharging the selected word line after the verify operation, and performing a program operation on the selected memory cells when the selected word line voltage reaches a program voltage level.
Abstract(Chinese):

半导体存储器件的编程方法包括：通过对所选择的字线施加所选择的字线电压，对所选存储单元执行校验操作，连续增加所选择的字线电压，而不在验证操作之后放电所选择的字线，并执行 当所选择的字线电压达到编程电压电平时对所选择的存储器单元进行编程操作。

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