Invention Grant
US08854898B2 Apparatuses and methods for comparing a current representative of a number of failing memory cells
有权
用于比较多个故障存储器单元的当前代表的装置和方法
- Patent Title: Apparatuses and methods for comparing a current representative of a number of failing memory cells
- Patent Title (中): 用于比较多个故障存储器单元的当前代表的装置和方法
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Application No.: US13326199Application Date: 2011-12-14
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Publication No.: US08854898B2Publication Date: 2014-10-07
- Inventor: Jae-Kwan Park
- Applicant: Jae-Kwan Park
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dorsey & Whitney LLP
- Main IPC: G11C7/10
- IPC: G11C7/10

Abstract:
Apparatuses and methods for comparing a sense current representative of a number of failing memory cells of a group of memory cells and a reference current representative of a reference number of failing memory cells is provided. One such apparatus includes a comparator configured to receive the sense current and to receive the reference current. The comparator includes a sense current buffer configured to buffer the sense current and the comparator is further configured to provide an output signal having a logic level indicative of a result of the comparison.
Public/Granted literature
- US20130155780A1 APPARATUSES AND METHODS FOR COMPARING A CURRENT REPRESENTATIVE OF A NUMBER OF FAILING MEMORY CELLS Public/Granted day:2013-06-20
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