Invention Grant
- Patent Title: Memory and method of refreshing a memory
- Patent Title (中): 内存和刷新内存的方法
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Application No.: US13743350Application Date: 2013-01-17
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Publication No.: US08854911B2Publication Date: 2014-10-07
- Inventor: Chun Shiah , Sen-Fu Hong
- Applicant: Etron Technology, Inc.
- Applicant Address: TW Hsinchu
- Assignee: Etron Technology, Inc.
- Current Assignee: Etron Technology, Inc.
- Current Assignee Address: TW Hsinchu
- Agent Winston Hsu; Scott Margo
- Priority: TW101110342A 20120326
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C11/402 ; G11C11/406

Abstract:
A memory includes a determination circuit, a plurality of refresh counters, and a plurality of banks. The determination circuit receives a refresh command. The plurality of refresh counters are coupled to the determination circuit. Each refresh counter of the plurality of refresh counters corresponds to one bank of the plurality of banks. The determination circuit detects whether a first bank of the plurality of banks is enabled or a number counted by a first refresh counter of the plurality of refresh counters corresponding to the first bank is equal to a predetermined value. Then, the determination circuit optionally refreshes one bank of the plurality of banks according to a detection result. Thus, the memory still refreshes an idle bank according to a refresh command even if the plurality of banks are not all idle.
Public/Granted literature
- US20130250711A1 MEMORY AND METHOD OF REFRESHING A MEMORY Public/Granted day:2013-09-26
Information query